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| Datasheet File OCR Text: |
| NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: D Large Current Capacity (IC = 2A) D Adoption of MBIT Process D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE(sat) < 0.5V Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 20V, IE = 0 VEB = 10V, IC = 0 VCE = 5V, IC = 500mA VCE = 10V, IC = 50mA VCE = 10V, f = 1MHz IC = 1A, IB = 20mA IC = 1A, IB = 20mA Min - - 800 - - - - 30 Typ - - Max 0.1 0.1 Unit A A MHz pF V V V 1500 3200 260 27 0.15 0.85 - - - 0.5 1.2 - V(BR)CBO IC = 10A, IE = 0 .315 (8.0) .106 (2.7) .433 (11.0) E C B .610 (15.5) .094 (2.4) |
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